| Place of Origin: | China |
|---|---|
| Brand Name: | CRYLINK |
| Certification: | Iso9001 |
| Minimum Order Quantity: | 1 Pieces |
| Price: | negotiation |
| Packaging Details: | Carton |
| Delivery Time: | 3-4 weeks |
| Payment Terms: | TT |
| Supply Ability: | 100 pieces /month |
| High Light: | laser material,titanium doped sapphire |
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|---|---|---|---|
Description
Ti:Sapphire (Titanium doped Sapphire, Al2O3:Ti3+) has a wide range of emission band from 660 to 1050 nm, which faciitates a variety of existing and potential applications, such as tunable continuous-wave lasers, mode-locked oscillators, chirp-pulse amplifiers, thin disk oscillators/amplifiers and lidars. Moreover, the absorption band of Ti:Sapphire is centered at 490 nm, ranging from 400 to 650 nm, which makes it suitable for pump sources of many different lasers, for example, argon ion, frequency doubled Nd:YAG (Nd:YLF), and copper vapor lasers. Because of 3.2 s fluorescence lifetime, Ti:Sapphire crystals can be effectively pumped by flash lamps in high-power laser systems.
In order to obtain good quality of Ti:Sapphire crystals, the Ti3+ doping concentration has to be kept fairly low (e.g. 0.15% or 0.25%). Therefore limited pump absorption usually enforces the use of a crystal length of several millimeters, which in combination with the small pump spot size (for high pump intensity) means that a rather high pump brightness is required. Fortunately, Sapphire has also an excellent thermal conductivity, alleviating thermal effects even for high laser powers.
Features
Applications
Parameters
|
Property |
Value |
|
Chemicalformula |
Ti3+:Al2O3 |
|
Crystalstructure |
hexagonal |
|
Orientation |
A-Axiswithin 5°E-vector parallel to C-Axis |
|
Massdensity |
3.98 g/cm3 |
|
Mohhardness |
9 |
|
Young'smodulus |
335 GPa |
|
Tensilestrength |
400 MPa |
|
Meltingpoint |
2040°C |
|
Thermalconductivity |
33 W/(mK) |
|
Thermalexpansion coefficient |
≈5×10-6K-1 |
|
Thermalshock resistance parameter |
790 W/m |
|
Refractiveindex at 633 nm |
1.76 |
|
Temperaturedependence of refractive index |
13×10-6K-1 |
|
Tidensity for 0.1% at. doping |
4.56×1019cm-3 |
Specifications
|
Property |
Value |
|
Fluorescencelifetime |
3.2 s |
|
Emissionwavelength |
660~1100nm |
|
Centralemission |
800nm |
|
Concentrations |
(0.05~0.35)wt% |
|
EndConfiguration |
Flat/Flator Brewster/Brewster ends |
|
Emissioncross section at 790 nm (polarization parallel to the c axis) |
41×10-20cm2 |
