| Place of Origin: | China |
|---|---|
| Brand Name: | CRYLINK |
| Certification: | Iso9001 |
| Model Number: | CRYLINK-ZnO Crystal |
| Minimum Order Quantity: | 1 Pieces |
| Price: | negotiation |
| Packaging Details: | Carton |
| Delivery Time: | 3-4 weeks |
| Payment Terms: | TT |
| Supply Ability: | 100 pieces /month |
| Name: | (ZnO) Single Crystals | Clear Aperture: | >95% |
|---|---|---|---|
| Chamfer: | <0.1×45° | Thickness/Diameter Tolerance: | ±0.05 Mm |
| High Light: | gallium gadolinium garnet,zno wafer |
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Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using a platinum inner container. The 2 inch ZnO wafers obtained from these bulk crystals possess an extremely high crystallinity and purity. The electrical resistivity is highly uniform over the entire wafer area. After annealing, the step-and-terrace structure was observed on the surface of the wafer. The etch pit density was decreased to less than 80 cm-2. These results suggest that these 2 inch ZnO wafers are suitable for wide band gap device applications. The bandgap is in the 3.4 eVrange which makes it attractive for many of the blue and violet applications in opto-electronics as well as UV devices.
Features
|
Excellent crystalline quality |
|
Excellent lattice match to nitride |
|
Easily etched for device integration |
Applications
|
Semiconductor circuit substrate |
|
ZnO LED |
|
ZnO film |
Main Specification
|
Materials |
ZnO |
|
Orientation |
[0 0 0 -1] or [1 0 -1 0] < ±0.5° |
|
Parallel |
10 |
|
Perpendicular |
5 |
|
surface Quality |
10/5 |
|
Wavefront Distortion |
/4 @632nm |
|
Surface Flatness |
/8 @632nm |
|
Clear Aperture |
>95% |
|
Chamfer |
<0.1×45° |
|
Thickness/Diameter Tolerance |
±0.05 mm |
|
Maximum dimensions |
dia 50×100mm |
|
Coatings |
AR/AR@940+1030HR@1030+HT@940+AR1030 |
Material characteristics
Physical and chemicalcharacteristics
|
Type of Material |
single crystal |
|
Crystal Structure |
hexagonal, a = b=3.252 , c = 5.313 |
|
Molecular Weight |
81.47 |
|
Refractive Index |
no = 1.3836, ne = 1.3957 @0.405 m |
|
Reflective Loss |
5,1% @4,0 m; 11,2% @0.12 m |
|
Density |
5.7 g/cm3 |
|
Melting Point |
1975°C |
|
Thermal Conductivity |
6 W/(mK) |
|
Thermal Expansion |
a: 6.510-6 /°C; C:3.710-6 / °C @20°C |
|
Hardness (Mohs) |
4 |
|
Dielectric Constant |
C: 4.87; ⊥C: 5.45 @95 KHz -42 MHz |
|
Solubility in Water |
no |
Standard product
|
Orientation |
End configuration, nm |
Thickness, nm |
Optical transmission |
|
[0 0 0 -1] |
5×5 |
0.5 |
no = 1.3836, @0.405 m |
|
[1 0 -1 0] |
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|
[0 0 0 -1] |
1 |
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|
[1 0 -1 0] |
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|
[0 0 0 -1] |
8×8 |
0.5 |
|
|
[1 0 -1 0] |
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|
[0 0 0 -1] |
1 |
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|
[1 0 -1 0] |
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|
[0 0 0 -1] |
10×10 |
0.5 |
|
|
[1 0 -1 0] |
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|
[0 0 0 -1] |
1 |
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|
[1 0 -1 0] |
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|
[0 0 0 -1] |
15×15 |
0.5 |
|
|
[1 0 -1 0] |
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|
[0 0 0 -1] |
1 |
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|
[1 0 -1 0] |
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|
[0 0 0 -1] |
dia 25.4 |
0.5 |
|
|
[1 0 -1 0] |
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|
[0 0 0 -1] |
1 |
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|
[1 0 -1 0] |
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