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Zinc Oxide Substrate Crystals / ZnO Wafer Excellentlattice Match To Nitride

Basic Information
Place of Origin: China
Brand Name: CRYLINK
Certification: Iso9001
Model Number: CRYLINK-ZnO Substrate Crystal
Minimum Order Quantity: 1 Pieces
Price: negotiation
Packaging Details: Carton
Delivery Time: 3-4 weeks
Payment Terms: TT
Supply Ability: 100 pieces /month
Detail Information
NAME: ZnO Crystal Substrates Orientation: [0 0 0 -1] Or [1 0 -1 0] < ±0.5°
Parallel: 10 Perpendicular: 5
High Light:

gallium gadolinium garnet

,

mgal2o4 spinel


Product Description

Description

Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using a platinum inner container. The 2 inch ZnO wafers obtained from these bulk crystals possess an extremely high crystallinity and purity. The electrical resistivity is highly uniform over the entire wafer area. After annealing, the step-and-terrace structure was observed on the surface of the wafer.

The etch pit density was decreased to less than 80 cm2. These results suggest that these 2 inch ZnO wafers are suitable for wide band gap device applications. The bandgap is in the 3.4 eVrange which makes it attractive for many of the blue and violet applications in opto-electronics as well as UV devices.

 

Features

  • Excellentcrystalline quality
  • Excellentlattice match to nitride
  • Easilyetched for device integration

Applications

  • Semiconductor circuit substrate
  • ZnO LED
  • ZnO film

Main Specification

Materials

ZnO

Orientation

[0 0 0 -1] or [1 0 -1 0] < ±0.5°

Parallel

10

Perpendicular

5

surfaceQuality

10/5

WavefrontDistortion

/4@632nm

SurfaceFlatness

/8@632nm

ClearAperture

>95%

Chamfer

<0.1×45°

Thickness/Diameter Tolerance

±0.05 mm

Maximumdimensions

dia50×100mm

Coatings

AR/AR@940+1030HR@1030+HT@940+AR1030

Material characteristics

Physical and chemicalcharacteristics

Typeof Material

singlecrystal

CrystalStructure

hexagonal, a = b=3.252 ,
c = 5.313

MolecularWeight

81.47

RefractiveIndex

no = 1.3836, ne = 1.3957@0.405 m

ReflectiveLoss

5,1%@4,0 m; 11,2% @0.12 m

Density

5.7g/cm3

MeltingPoint

1975°C

Thermal Conductivity

6 W/(mK)

ThermalExpansion

a6.5 10-6 /°C; C:3.710-6 / °C @20°C

Hardness(Mohs)

4

DielectricConstant

C4.87; ⊥C5.45 @95 KHz - 42 MHz

Solubilityin Water

no

Standard product

Orientation

End configuration, nm

Thickness, nm

Optical transmission

[0 0 0 -1]

5×5

0.5

no = 1.3836,
ne = 1.3957

@0.405 m

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

8×8

0.5

[1 0 -1 0]

[0 0 0 -1]

 

 

 

Contact Details
june

Phone Number : +8618699681379