| Place of Origin: | China |
|---|---|
| Brand Name: | CRYLINK |
| Certification: | Iso9001 |
| Model Number: | CRYLINK-MgAl2O4 Spinel Crystal |
| Minimum Order Quantity: | 1 Pieces |
| Price: | negotiation |
| Packaging Details: | Carton |
| Delivery Time: | 3-4 weeks |
| Payment Terms: | TT |
| Supply Ability: | 100 pieces /month |
| Name: | MgAl2O4 Crystal Substrates | Orientation: | [100] Or [100] Or[111] < ±0.5° |
|---|---|---|---|
| Chamfer: | <0.1×45° | Thickness/DiameterTolerance: | ±0.05 Mm |
| High Light: | gallium gadolinium garnet,zno wafer |
||
Description
Magnesium Aluminate (MgAl2O4 or spinel) single crystalsare widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. MgAl2O4 is an attractive material for uses in a wide range of optical, electronic and structural applications including windows and lenses, which require excellent transmission from the visible through to the mid IR.
Theoretical transmission is very uniform and approaches 87% between 0.3 to 5 microns. Transmission characteristics rival that of ALON and sapphire in the mid-wave IR, making it especially attractive for the ever-increasing performance requirements of current and next-generation IR imaging systems.
It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083 A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films.
MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.
Features
Applications
Main Specification
|
Materials |
MgAl2O4 |
|
Orientation |
[100] or [100] or[111] < ±0.5° |
|
Parallel |
10 |
|
Perpendicular |
5 |
|
surface Quality |
10/5 |
|
Wavefront Distortion |
/4@632nm |
|
Surface Flatness |
/8@632nm |
|
Clear Aperture |
>95% |
|
Chamfer |
<0.1×45° |
|
Thickness/DiameterTolerance |
±0.05 mm |
|
Maximum dimensions |
dia 50×100mm |
|
Coatings |
AR/AR@940+1030HR@1030+HT@940+AR1030 |
Material characteristics
Physical and chemicalcharacteristics
|
Chemicalformula |
MgAl2O4 |
|
Crystalstructure |
cubicm3m |
|
Latticeparameters, |
a= 8.083 |
|
MeltingPoint(℃) |
2130°C |
|
Density,g/cm3 |
3.61g/cm3 |
|
TransmissionRange |
0.215.3 m |
|
Refractiveindex |
1.8245@0.8 m, |
|
Mohshardness |
8 |
|
Thermalconductivity at 25°C, W x cm-1 x °K-1 |
14.0W/(mK) |
|
Thermalexpansion coefficient |
7.45×10-6/K |
|
PhaseVelocity |
6500 m/s at (100) shear wave |
|
Propagationloss |
6.5dB/ms |
|
SpecificHeat |
0.59W.s/g/K |
