| Place of Origin: | China |
|---|---|
| Brand Name: | CRYLINK |
| Certification: | Iso9001 |
| Model Number: | CRYLINK-ZnO Substrate Crystal |
| Minimum Order Quantity: | 1 Pieces |
| Price: | negotiation |
| Packaging Details: | Carton |
| Delivery Time: | 3-4 weeks |
| Payment Terms: | TT |
| Supply Ability: | 100 pieces /month |
| NAME: | ZnO Crystal Substrates | Orientation: | [0 0 0 -1] Or [1 0 -1 0] < ±0.5° |
|---|---|---|---|
| Parallel: | 10 | Perpendicular: | 5 |
| High Light: | gallium gadolinium garnet,mgal2o4 spinel |
||
Description
Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using a platinum inner container. The 2 inch ZnO wafers obtained from these bulk crystals possess an extremely high crystallinity and purity. The electrical resistivity is highly uniform over the entire wafer area. After annealing, the step-and-terrace structure was observed on the surface of the wafer.
The etch pit density was decreased to less than 80 cm2. These results suggest that these 2 inch ZnO wafers are suitable for wide band gap device applications. The bandgap is in the 3.4 eVrange which makes it attractive for many of the blue and violet applications in opto-electronics as well as UV devices.
Features
Applications
Main Specification
|
Materials |
ZnO |
|
Orientation |
[0 0 0 -1] or [1 0 -1 0] < ±0.5° |
|
Parallel |
10 |
|
Perpendicular |
5 |
|
surfaceQuality |
10/5 |
|
WavefrontDistortion |
/4@632nm |
|
SurfaceFlatness |
/8@632nm |
|
ClearAperture |
>95% |
|
Chamfer |
<0.1×45° |
|
Thickness/Diameter Tolerance |
±0.05 mm |
|
Maximumdimensions |
dia50×100mm |
|
Coatings |
AR/AR@940+1030HR@1030+HT@940+AR1030 |
Material characteristics
Physical and chemicalcharacteristics
|
Typeof Material |
singlecrystal |
|
CrystalStructure |
hexagonal, a = b=3.252 , |
|
MolecularWeight |
81.47 |
|
RefractiveIndex |
no = 1.3836, ne = 1.3957@0.405 m |
|
ReflectiveLoss |
5,1%@4,0 m; 11,2% @0.12 m |
|
Density |
5.7g/cm3 |
|
MeltingPoint |
1975°C |
|
Thermal Conductivity |
6 W/(mK) |
|
ThermalExpansion |
a6.5 10-6 /°C; C:3.710-6 / °C @20°C |
|
Hardness(Mohs) |
4 |
|
DielectricConstant |
C4.87; ⊥C5.45 @95 KHz - 42 MHz |
|
Solubilityin Water |
no |
Standard product
|
Orientation |
End configuration, nm |
Thickness, nm |
Optical transmission |
|
[0 0 0 -1] |
5×5 |
0.5 |
no = 1.3836, @0.405 m |
|
[1 0 -1 0] |
|||
|
[0 0 0 -1] |
1 |
||
|
[1 0 -1 0] |
|||
|
[0 0 0 -1] |
8×8 |
0.5 |
|
|
[1 0 -1 0] |
|||
|
[0 0 0 -1] |
